Overview of Equipment and Application Fields

The D210 intelligent PECVD system is a compact plasma-enhanced chemical vapor deposition device for laboratory research and small sample preparation. Adopting a desktop integrated structure, it occupies less space and runs stably.

With RF plasma activation, it assists film forming at 400–600°C, and optional high-temperature heating up to 1200°C meets diverse experimental needs. It is widely used for preparing graphene, DLC films, silicon-based thin films, dielectric layers, carbon nanomaterials and optical functional coatings. It is commonly adopted by universities, research institutions and enterprise laboratories for new material testing and process research.

Core Functional Highlights

Compact Desktop Structure & Stable Plasma Performance

It features an integrated desktop layout, suitable for conventional laboratory platforms. Equipped with a 13.56 MHz RF power supply (0–300W) and automatic impedance matching unit, it forms stable plasma inside the quartz cavity. Plasma effectively reduces reaction energy consumption, realizing low-temperature deposition and protecting temperature-sensitive substrates while improving film compactness and binding force.

High-precision Temperature Control

Optional single/dual independent PID temperature control, with optional maximum temperature of 1000°C or 1200°C, control accuracy ±1℃. It supports multi-segment programmable temperature procedures, matched with plasma linkage control. Real-time data recording ensures stable and repeatable experimental results.

Multi-channel Precise Gas Distribution

Configured with 4–6 expandable gas pipelines and high-precision MFC flow controllers, it achieves accurate gas proportioning and uniform mixing. The pre-mixing structure stabilizes the internal cavity environment and maintains consistent thin film preparation conditions.

Wide-range Vacuum Environment

It supports normal pressure and low-pressure plasma processes. The standard vacuum unit reaches a vacuum level of 5×10⁻³ Pa, with an upgraded molecular pump available for higher vacuum demand. Equipped with high-precision pressure detection and adjustable valves, it maintains stable working pressure for material growth.

Complete Safety Design & Easy Operation

Multiple safety interlock functions include over-temperature cutoff, water flow monitoring, overcurrent prevention and radio frequency protection. Reserved external gas processing interfaces meet laboratory safety operation norms.

PLC combined with touch screen control realizes parameter display, process recipe storage and data export, with simple operation and clear data viewing.

Technical Parameters and Specifications

Typical Application Scenarios

• Low-temperature preparation of graphene and carbon-based materials

• Deposition of wear-resistant and lubricating DLC functional films

• Research of amorphous silicon and microcrystalline silicon thin film devices

• Preparation of silicon nitride and silicon oxide insulating protective layers

• Growth of carbon nanotube arrays and micro-nano functional materials

• Preparation of optical anti-reflection, reflection and special coating layers

• Surface treatment and interface modification of polymer materials

Product Advantages

The D210 desktop PECVD features a compact structure and reasonable configuration, lowering the threshold for laboratory thin film research. It combines low-temperature plasma deposition and high-temperature thermal treatment functions, with flexible parameter adjustment and wide process compatibility.

Equipped with complete protection measures and visualized operation system, it delivers stable running performance and convenient daily maintenance. It is a practical experimental device for conventional material deposition and exploratory research in scientific research laboratories.